The Role of Oxygen Containing Impurities in Defects Formation in Cesium Halide Crystals |
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| Authors: | I. Hud I. Garapyn |
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| Affiliation: | Physical Department, Lvan Franko Lviv National University, vul. Dragomanova 50, Lviv, 79005, Ukraine |
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| Abstract: | The dependence of defect formation efficiency in CsI single crystals both on the type of oxygen containing impurities and the value of the absorbed irradiation dose was studied. Correlative results were obtained under investigation by methods of ionic thermocurrent (ITC), thermostimulated exoemission (TSEE), electrical conductivity and optical spectroscopy. The peculiarities of defect formation in γ-irradiated CsI-CO3(SO4, OH) and X-irradiated CsI-OH single crystals are discussed. |
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| Keywords: | Cesium halide Oxygen containing impurities γ- and X-irradiation |
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