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On the core concentration and the formation kinetics of thermal donors in silicon |
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| Authors: | J. L. Lindström D.-X. Xu H. Weman B. G. Svensson |
| Affiliation: | 1. Swedish Defence Research Establishment , P.O. Box 1165, S-581 11, Link?ping, Sweden;2. Department of Physics and Measurement Technology , University of Link?ping , S-581 83, Link?ping, Sweden;3. The Royal Institute of Technology, Solid State Electronic , P.O. Box 1298, S-164 28, Kista-Stockholm, Sweden |
| Abstract: | Abstract In this work the anomalous formation kinetics of old thermal donors (TD) observed in the initial stage of formation in pre-heat-treated carbon-rich samples are studied. Computer simulations applying a reaction scheme where the TD-complexes are subsequently formed by single oxygen diffusion reveal that the experimental results can only be acounted for if the pre-existing TD-core involves three oxygen atoms and has a concentration in the range 1013-1014 cm?3. Carbon is found to have a major influence on the production rate of pre-existing cores. |
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