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Effect of 100 keV N+ ion irradiation on the organic single crystal of hippuric acid for nonlinear optical applications
Authors:Neelam Rani  Suraj Karan Jat  KK Maurya  P Kumar  AP Gnana Prakash
Institution:1. CSIR-National Physical Laboratory, New Delhi 110012, India;2. Department of Physics, Jamia Millia Islamia, New Delhi 110025, India;3. Center for Converging Technologies, University of Rajasthan, Jaipur 302004, India;4. Inter-university Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067, India;5. University of Mysore, Manasagangotri, Mysore 570 006, Karnataka, India
Abstract:The potential organic nonlinear optical material of hippuric acid (HA) single crystal has been grown by the slow evaporation solution growth technique using N, N-dimethylformamide as the solvent. Single crystals of pure HA were irradiated at room temperature with 100 keV Nitrogen (N+) ions at fluence 1×1016 and 5×1016 ions/cm2. The pure and irradiated HA single crystals were characterized by different characterization technique. The photoluminescence and UV–visible absorption were performed at room temperature. The crystalline perfection of the pure and irradiated single crystals has been examined by high-resolution X-ray diffraction. Vickers microhardness technique was used to study the effect on the mechanical strength of the crystal at different ion fluences. The structural changes were analyzed by powder X-ray diffraction analysis. The functional groups of the synthesized compound have been identified by Fourier transform infrared spectroscopy. The dielectric constant and dielectric loss as a function of frequency were analyzed at room temperature.
Keywords:single crystal  amino acid  solution growth  nonlinear optical material  irradiation
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