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Long range effect in ion-implanted GaAs |
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| Authors: | Yu. A. Aleshchenko E. A. Bobrova V. S. Vavilov L. K. Vodopyanov G. N. Galkin M. V. Chukichev |
| Affiliation: | 1. P. N. Lebedev Physics Institute , Moscow;2. Lomonosov State University, Dept. of Physics , Moscow |
| Abstract: | Abstract New experimental data are presented which indicate the change of defect centers concentration in GaAs at macroscopic (up to millimeters) distances from the implanted regions edge. These data were obtained by locally exited cathodoluminescence, by observation of photoconductivity detected locally by contactless MW technique, by conductivity, DLTS and Raman spectroscopy measurement. Interpretation of the mechanism of long range effect is presented. |
| Keywords: | GaAs ion implantation long range effect cathodoluminescence MW photoconductivity DLTS |