Plasma-based sputtering of indium tin oxide for the application of photovoltaic cells |
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Authors: | E. Akbarnejad Z. Ghorannevis M. Ghoranneviss |
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Affiliation: | 1. Plasma Physics Research Center, Science and Research Branch, Islamic Azad University, Tehran, Iran;2. Department of Physics, College of Basic Sciences, Karaj Branch, Islamic Azad University, Alborz, Iran |
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Abstract: | Transparent and conducting indium tin oxide (ITO) thin films were deposited on soda lime glass substrates by RF plasma magnetron sputtering at room temperature. The effect of thickness (100, 200 and 300?nm) on the physical (structural, optical, electrical) properties of ITO thin films was investigated systematically. It is observed that with an increase in thickness, the X-ray diffraction data indicate polycrystalline films with grain orientations predominantly along (222) and (400) directions; the average grain size increases from 10 to 30?nm; the optical band gap increases from 3.68 to 3.73?eV and the transmission decrease from 80% to 70% . Four-point probes show a low resistivity (2.4×10?5?Ω?cm) values for film with a thickness 300?nm. Present work shows that the ITO is a promising transparent conductive oxide material for the solar cell application. |
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Keywords: | indium tin oxide magnetron sputtering solar cell |
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