Nitrogen vacancy and oxygen impurity in AlN: spintronic quantum dots |
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| Authors: | J M Vail T Haroon J Hernandez-Melgar D K Chevrier R Pandey |
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| Institution: | 1. Department of Physics and Astronomy , University of Manitoba , Winnipeg, MB, Canada , R3T 2N2;2. Winnipeg Institute for Theoretical Physics , Winnipeg, MB, Canada , R3T 2N2vail@cc.umanitoba.ca;4. Department of Electrical Engineering , University of British Columbia , Vancouver, BC, Canada , V6T 1Z4;5. Winnipeg Institute for Theoretical Physics , Winnipeg, MB, Canada , R3T 2N2;6. Canadian Light Source Inc. , University of Saskatchewan , Saskatoon, SK, Canada , S7N 0X4;7. Department of Physics , Michigan Technological University , Houghton, MI, 49931, USA |
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| Abstract: | Point defects with non-zero spin are prototypical spintronic quantum dots. Here two anion-site defects in AlN are studied intensively in terms of their spin and related properties. The charged states of the nitrogen vacancy and substitutional oxygen impurity, in both ground and spin-flip states, are analyzed. The theoretical analysis includes optical absorption and emission, diffuse excited states, spin densities and local mode force constants. The relevance to spintronic quantum dots in semiconductors is discussed. |
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| Keywords: | point defects aluminum nitride spintronic systems quantum dots |
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