Electron Spin Resonance Study of Yttrium Aluminum Garnet Films Doped with Nd and Yb Ions |
| |
Authors: | M. Koziorowska J. Sarnecki M. Palczewska |
| |
Affiliation: | Institute of Electronic Materials Technology, 133 Wólczyńska Str., 01-919 Warsaw, Poland |
| |
Abstract: | Yttrium aluminum garnet (YAG) thin films doped with optical active rare earth ions grown on YAG substrate can be used as wave-guide laser. Measured layers YAG:Yb, Nd (grown by the isothermal liquid phase epitaxy (LPE)) was additionally doped with Ga and Lu ions in order to increase film refractive index and decrease strains in layers, respectively. Electron spin resonance measurements have been performed on a number of YAG:Yb, Nd thin films with Yb concentrations ranging from 0at.% to 15at.% and Nd concentration equals to 1 at.% and 3 at.%. It was found that the measured angular dependence of the Yb3? ion linewidth is typical for a mosaic structure. Moreover, it was shown that internal strains in the layers depend on the kind of dopant as well as on their concentration. |
| |
Keywords: | ESR YAG:Yb Epitaxial layers Wave-guide laser |
|
|