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Crystalline to amorphous transformations in ion implanted GaP |
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| Authors: | J. Krynicki A. Kozanecki W. Szyszko R. Groetzschel |
| Affiliation: | 1. Institute of Nuclear Chemistry and Technology , ul. Dorodna 16, 03–195, Warsaw, Poland;2. Institute of Physics, Polish Academy of Sciences , Al. Lotnikow 32/46, 02-668, Warsaw, Poland;3. Institute of Physics, Maria Curie-Sklodowska University , Lublin, Poland;4. Zentralinstitute für Kernforschung, Rossendorf , Postfach 19, Dresden, DDR-8051, Germany |
| Abstract: | Abstract The amorphization process of GaP by ion implantation is studied. The samples of 〈111〉 oriented GaP were implanted at 130 K with various doses 5 × 1013-2 × 1016 cm?2 of 150 keV N+ ions and with the doses of 6 × 1012-1.5 × 1015 cm?2 of 150 keV Cd+ ions. Room temperature implantations were also performed to see the influence of temperature on defect production. Rutherford backscattering and channelling techniques were used to determine damage in crystals. The damage distributions calculated from the RBS spectra have been compared with the results of Monte-Carlo simulation of the defect creation. The estimated threshold damage density appeared to be independent on ion mass and is equal 6.5 × 1020 keV/cm3. It is suggested that amorphization of GaP is well explained on the basis of a homogenous model. |
| Keywords: | GaP RBS amorphization ion implantation channeling |