Luminescence and Stimulated Emission in Zinc Oxide Nanoparticles,Films, and Crystals |
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Authors: | Gang Xiong John Wilkinson Jacob Lyles K. B. Ucer R. T. Williams |
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Affiliation: | 1. Department of Physics, Wake Forest University, Winston-Salem, NC 27109, USAxiong01@wfu.edu;3. Department of Physics, Wake Forest University, Winston-Salem, NC 27109, USA |
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Abstract: | ZnO has attracted attention as a candidate material for ultraviolet light-emitting devices. Its 3.37 -eV band gap is comparable to that of GaN, and single crystal substrates can be grown. Control of p-type conductivity in ZnO is under study in several laboratories including ours. We report streak camera measurements of time-resolved luminescence and stimulated emission excited in single crystal, film, and particle samples under excitation by 300 fs laser pulses at temperatures from 17 K to 295 K. We also describe p-n junctions formed by control of oxygen pressure in reactive sputtering of ZnO films, and results of introducing nitrogen during reactive sputtering. |
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Keywords: | ZnO Photoluminscence Lifetime p-n junction |
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