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Fast Intrinsic Emissions of Wide-Gap Oxides Under Electron Irradiation
Authors:A Lushchik  F Savikhin  I Tokbergenov
Institution:1. Institute of Physics, University of Tartu, Riia 142, 51014 Tartu, Estonia;2. luch@fi.tartu.ee;4. Almaty State University, Dastyk 13, 480100 Almaty, Kazakhstan
Abstract:The emission spectra have been measured in the range of 1.6–9.0eV under irradiation of wide-gap oxides by single electron pulses (3 ns, 300kV). A fast (τ < 3 ns) continuous and temperature-independent emission, connected mainly with the transitions of hot holes between the levels of the valence band of oxides, can be separated in these spectra at 300–600 K, when the inertial emissions (5–7eV) of localized excitations undergo a strong thermal quenching. It is suggested that a drastic decrease of the intensity of this so-called hole intraband luminescence (IBL) in a short-wavelength spectral region is caused by the lowering of the density of states at the edges of the valence band and, therefore, supplies information on the width of an anion valence band Ev. The drastic decrease of the IBL intensity takes place at 6.4–8.6eV in BaMgAl10O17, SrAl2O4, MgAl4O7, MgO and BeO, that agrees satisfactorily with the values of Ev in these systems obtained by other methods.
Keywords:Fast intrinsic luminescence  Wide-gap oxides
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