95 MeV Oxygen Ion Irradiation Effects on N-Channel Mosfets |
| |
| Authors: | A. P. Gnana Prakash S. C. Ke K. Siddappa |
| |
| Affiliation: | 1. Department of Physics, National Dong Hwa University, Shou-Feng, Hualien-974-01, Taiwanprakash@tnail.ndhu.edu.tw;3. Department of Physics, National Dong Hwa University, Shou-Feng, Hualien-974-01, Taiwan;4. Microtron Centre, Department of Physics, Mangalore University, Mangatore-574 199, India |
| |
| Abstract: | The N-channel metal oxide semiconductor field effect transistors (MOSFETs) were exposed to 95 MeV oxygen ions in the fluence range of 5 × 1010 to 5 × 1013 ions/cm2. The influence of ion irradiation on threshold voltage (VTH), linear drain current (IDLin), leakage current (IL), drain conductance (gD), transconductance (gm), mobility (μ) and drain saturation current (IDSat) of MOSFETs was studied systematically for various fluence. The VTH of the irradiated MOSFET was found to decrease significantly after irradiation. The interface (Nit) and oxide trapped charge (Not) were estimated from the subthreshold measurements and were found to increase after irradiation. The densities of oxide-trapped (ΔNit) charge in irradiated MOSFETs were found to be higher than those of the interface trapped charge (ΔNot). The IDLin and IDSat of MOSFETs were also found to decrease significantly after irradiation. Studies on effects of 95 MeV oxygen ion irradiation on gm, gD and μ show a degradation varying from 70 to 75% after irradiation. The mobility degradation coefficients for Nit(αit) and Not(αit) were estimated. The results of these studies are presented and discussed. |
| |
| Keywords: | Interface trapped charge Oxide trapped charge Ion irradiation MOSFET Mobility degradation |
|
|
