Electron beam epitaxy of alloy semiconductors

Abstract

It was investigated that, when an Al evaporated layer on a GaP (GaAs, GaAs_1?y P _y ) substrate was bombarded with total fluences of 0.1?1.0 × 10¹⁸ electrons cm^?2 at 7 MeV and at 50°C, a thin heteroepitaxial layer of Al _x Ga_1?x P (Al _x Ga_1?x As, Al _x Ga_1?x As_1?y P _y ) crystal was grown on S-doped (111), (100) and (110) GaP (110) Cr, O-doped GaAs, (100) Te-doped GaAS_1?y P _y ] substrates.

Evidence for the creation of the epilayers before annealing was obtained from measurements using an X-ray diffractometer, an X-ray photoelectron spectrometer, a reflection high-energy electron diffractometer, a transmission electron microscope and a scanning transmission electron microscope. In the case of Al/GaP, the epitaxial layers of Al_～0.25Ga_～0.75P, Al_～0.5Ga_～0.5P and Al_～0.75Ga_～0.25P were grown on (111), (100) and (110) GaP substrates, respectively. Their compositions did not vary with the total electron fluence.