Temperature dependence of ion-induced auger electron emission from (111) silicon: I. Experiments |
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Authors: | C. Benazeth P. Hecquet C. Mayoral N. Benazeth |
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Affiliation: | Laboratoire de Physique des solides , Associé au C.N.R.S., Université Paul Sabatier , 31062 , Toulouse , Cédex , France |
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Abstract: | Abstract Measurements of both secondary electron emission coefficient γ and SiL23 Auger yield ρA obtained from (111) Si target bombarded by high fluence of noble gas ions were performed. For Si irradiated at room temperature at doses more than 1017 ions per cm2, monotonous increasing variation of γ and ρA versus incidence angle i was observed. For Si irradiated at a temperature more than a critical value, γ(i) and ρA(i) curves exhibited, superimposed to monotonous variation, some minima when the ion beam penetrates the crystal along low index directions. In the range 20–650°C, the Auger yield temperature dependence showed a sharp variation around a critical value depending on the ion mass for a given incident energy. These results are linked to an amorphous-crystalline phase transition. |
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Keywords: | Auger electrons silicon temperature dependence ion bombardment noble gases high fluences mass dependence energy dependence |
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