The defects produced by electron irradiation in tellurium-doped germanium |
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| Authors: | Noboru Fukuoka Haruo Saito |
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| Institution: | Department of Physics, Faculty of Science , Naruto University of Education , Naruto, Tokushima, 772, Japan |
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| Abstract: | Abstract The nature of the irradiation induced defects in germanium single crystal doped with tellurium was studied by DLTS and electrical measurements. The Ec-0.21 eV level produced by irradiation with 1.5 MeV electrons was studied by DLTS technique. It was found that the defect associated with the Ec-0.21 eV level is divacancy. The E-center like defect (group V impurity-vacancy pair) introduces the Ec-0.20 eV level in samples doped with group V impurity. The level introduced by tellurium (group VI impurity)-vacancy pair is located at deeper than Ec-0.21 eV. The Ec-0.16 eV level was generated by the annealing at 430 K. A model for the defect associated with the level is proposed to be a tellurium-vacancies complex. |
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