TEM study of ion implanted GaAs after pulsed electron beam annealing |
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| Authors: | H. L. Gaigher H. W. Alberts |
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| Affiliation: | Department of Physics , University of Pretoria , Pretoria, 0002 |
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| Abstract: | Abstract (001) GaAs single crystals were implanted with 150 keV Cr+ ions using a dose of 5 × 1015 ions cm?2. The amorphized surface layers were subjected to pulsed electron beam annealing at energy densities in the range 0–1.3 J cm?2. A detailed TEM investigation of the damaged and annealed surface layer was conducted. These observations were correlated with backscattering results. |
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| Keywords: | pulsed electron beam annealing transmission electron microscopy ion implantation GaAs |
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