Ion-beam mixing of Co-Si and Co-SiO2: A comparison between Monte Carlo simulations and experiments |
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| Authors: | I. Kasko C. Dehm J. Gyulai H. Ryssel |
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| Affiliation: | 1. Fraunhofer Arbeitsgruppe für Integrierte Schaltungen , Artilleriestrasse I2, D-91052, Erlangen, Germany;2. Central Research Institute for Physics , H-1525, Budapest, P.O. Box 49, Hungary;3. Lehrstuhl für Elektronische Bauelemente, Universit?t Erlangen-Nürnberg , Cauerstrasse 6, D-91052, Erlangen, Germany |
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| Abstract: | Abstract The reaction of thin Co films with Si and SiO2 during ion-beam mixing with As and Ge was studied. Fluences and energies used were varied between 2-1014 and 5-1015 cm?2, and 15 and 200 keV, respectively. Concentration profiles of As, Ge, and Co were measured by SIMS; cross-sectional TEM-analysis was applied in order to investigate the metal-silicon interface. By comparing theoretical and experimental profiles, it was possible to separate ballistic effects from thermal processes in the Co-Si system. All theoretical profiles were calculated using the dynamic Monte-Carlo simulation program T-DYN. In case of Co-SiO2 interaction, it could be shown that the Co distribution in the oxide was only caused by recoil implantation and not by diffusion processes or reactions. |
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| Keywords: | Ion-Beam Mixing Monte-Carlo simulation cobalt silicide oxide |
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