Photoconductivity derived from an exact modelling of the uncompensated one-donor model. II—computer simulation of the steady-state exact model |
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Authors: | Alain Pillonnet Roger Ongaro Mohammed Garoum |
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Institution: | 1. Université Claude Bernard LYON 1 , Batiment 721, Avenue du 11 Novembre 1918, Villeurbanne, Cedex, 69622, France;2. Ecole Supérieure de Technologie de Salé, Département de Génie Urbain et Environnement , BP 227, Avenue Prince Heritier Sidi Mohamed, Salé Médina, Maroc |
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Abstract: | Abstract Stationary photoconductivity is treated with the model of Part I, free from any of the usual simplifying approximations of the related equations. This simulation leads to set forth a new concept of characteristic temperature T 0, at which the donor population is independent of the illumination intensity G. T 0 separates two intervals of temperature over which G either partially empties (T< T 0) or fills (T > T 0) the level. Also T 0 has, in particular, an influence on the ratio n/p of free electrons and holes. The effective isothermal behaviour of n(G) shows that n(G) ∞ G 1/2 on the lower side of the G range, and n(G) ∞ G at higher G. Variations of n(T) at constant G also display original, T 0 dependent, characteristics. Finally, a qualitative comparison is made of the 1D model with the two 1Dai approximate models described in I, in order to distinguish their most prominent behaviour differences. |
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Keywords: | Photoconductivity Localised states Modelling Computerising |
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