Charge exchange features of excited sputtered particle production |
| |
Authors: | V E Yurasova I F Urazgil'din |
| |
Institution: | Department of Physics , Moscow State University , Moscow, 119899, USSR |
| |
Abstract: | Abstract The results are presented which have been obtained by studying the angular dependence of photon and ion emission and the spatial energy distribution of excited silicon ions produced under ion bombardment of monocrystalline and amorphized silicon surface. The experimental data are discussed which have been obtained mostly by the coincidence method. The theoretical concepts making it possible to account for the observed behavioural features are also discussed. |
| |
Keywords: | |
|
|