Depth distribution of SiD and SiD2 complexes in silicon bombarded by 10 keV D+ 2 ion |
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| Authors: | M A Lomidze A E Gorodetsky A P Zakharov |
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| Institution: | Institute of Physical Chemistry, Russian Academy of Sciences , Leninsky pr. 31, 117915, Moscow, Russia |
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| Abstract: | Abstract A secondary ion mass spectrometry (SIMS) and a neutral molecule mass spectrometry (NMMS) study of deuterium trapping in a single crystalline silicon as a result of ion irradiation at fluences 1016--1018 cm-2 are presented. An attempt has been made to observe the formation and evolution of defect profiles containing one or two deuterium atoms (SiD- and SiD2-complexes). The proposed model of radiation-induced sequential reactions describes satisfactorily the accumulation of SiD- and SiD2-complexes and the reemission of D2-molecules. |
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