Analysis of the composition of Ti-based thin films deposited on silicon by means of self-ion assisted deposition |
| |
| Authors: | I. S. Tashlykov P. V. Zukowski S. M. Baraishuk O. M. Mikhalkovich |
| |
| Affiliation: | 1. Department of Experimental and Theoretical Physics , Belarusian State Pedagogical University , Sovetskaja Str.18, 220050, Minsk, Republic of Belarus tashl@bspu.unibel.by;3. Lublin University of Technology , Nadbystrzytska st. 38 A, 20-618, Lublin, Poland;4. Department of Experimental and Theoretical Physics , Belarusian State Pedagogical University , Sovetskaja Str.18, 220050, Minsk, Republic of Belarus |
| |
| Abstract: | The composition of Ti-based thin films deposited on silicon using a self-ion assisted deposition (SIAD) method was investigated by utilising the Rutherford backscattering spectrometry technique and RUMP simulation code. The hydrogen affinity of the coatings produced by means of SIAD was investigated using the 1H(15N, αγ)12C nuclear resonance reaction. The titanium–based films on silicon were found to have a high content of oxygen, carbon, hydrogen and substantial concentration of the substrate. Near 10% H content enrichment was found at the surface of coatings but no hydrogen enrichment at the coating–substrate interfaces was observed. |
| |
| Keywords: | Ti-based films Hydrogen content Self–ion assisted deposition |
|
|
