Optical properties of group-V atom-vacancy pairs in silicon |
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Authors: | G. D. Watkins |
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Affiliation: | Department of Physics and Sherman Fairchild Laboratory 161 , Lehigh University , Bethlehem, Pennsylvania, 18015, USA |
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Abstract: | Abstract Two optical absorption bands are identified as arising from the negative charge state of each of the P-, As-, and Sb-vacancy pairs in silicon. The more prominent band for each is at 6150, 6000, and 5500 cm?1, respectively. A second broader partially overlapping band at ~8500 cm?1 is also present for each. Dichroism produced in the bands by uniaxial stress reveals a static Jahn-Teller distortion of opposite sign to that for the neutral state previously studied by EPR. The absorption bands can be identified as electron transitions from filled to empty orbitals of a simple one-electron molecular orbital model for the defect. |
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