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Isotopic mass effects for low-energy channeling in a silicon crystal |
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| Authors: | Li-Ping Zheng Zhi-Yuan Zhu Long Yan De-Zhang Zhu |
| Affiliation: | 1. Shanghai Institute of Applied Physics, Chinese Academy of Sciences , PO Box 800-204, Shanghai, 201800, People's Republic of China;2. International Centre for Material Physics, Chinese Academy of Sciences , Shenyang, 110016, People's Republic of China;3. Shanghai Institute of Applied Physics, Chinese Academy of Sciences , PO Box 800-204, Shanghai, 201800, People's Republic of China |
| Abstract: | Monte Carlo (MC) simulations have been used to study the low-energy channeling of 10B and 11B ions along the [100] axis in Si crystal. MC simulations show that the critical angle ΨC ≈ 15.3(keV/E)1/2 (in degrees) for the channeling of isotopic 10B ions and ΨC=14.5(keV/E)1/2 (in degrees) for the channeling of isotopic 11B ions, where E is the incident energy. This means that (ΨC for 10B ions/ΨC for 11B ions)≈ (15.3/14.5)≈ (11/10)1/2. |
| Keywords: | mass effect channeling silicon crystal |