Defect influence on charge transport in chalcogenide glasses |
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| Authors: | N I Anisimova G A Bordovsky V A Bordovsky R A Castro |
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| Institution: | Herzen State Pedagogical University of Russia, Department of Physics , Moika Emb. 48, Saint-Petersburg, 191186, Russia |
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| Abstract: | Abstract Conductivity of chalcogenide glasses was measured as a function of temperature (290–340 K) and frequency (10?4–10?1 Hz). Frequency dependence of conductivity can be approximated by a power law G～ωs (S < 1). The relaxation maximum of dielectric losses was found. The dielectric constant ? decreases with frequency rise. The obtained results are discussed in terms of the defect structure model. |
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| Keywords: | Chalcogenide glasses Charge transport |
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