The behaviour of mosaic blocks and electrical properties of polysilicon under ion implantation |
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Authors: | A P Pavlov P V Pavlov D I Tetelbaum V G Shengurov |
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Institution: | Lobachevsky State University , Gagarin Prospekt 23, Gorky , Russia |
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Abstract: | Abstract The change in microstrains ε, block sizes L and in the temperature dependences of conductivity of polysilicon with the grain size 30-40nm at N+, Ne+, P+ ion irradiation has been studied. It is shown that ε increases while L practically is not changing up to amorphization. The change in conductivity is governed by an increase in the density of states near the Fermi level and depends both on the damage rate for the given ions and their chemical activity. |
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Keywords: | ion implantation polysilicon mosaic blocks activation energy of conductivity dangling bonds |
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