Effect of deposition temperature on key optoelectronic properties of electrodeposited cuprous oxide thin films |
| |
| Authors: | C Ravichandiran A Sakthivelu R Davidprabu S Valanarasu A Kathalingam V Ganesh Mohd Shkir C J Sreelatha S AlFaify |
| |
| Institution: | 1.Physics Department,M.I.E.T Engineering College,Trichy,India;2.PG and Research Department of Physics,Periyer E.V.R College,Trichy,India;3.PG and Research Department of Physics,Arul Anandar College,Karumathur, Madurai,India;4.Millimeter-Wave Innovation Technology Research Center (MINT),Dongguk University-Seoul,Seoul,Republic of Korea;5.Advanced Functional Materials and Optoelectronics Laboratory (AFMOL), Department of Physics, Faculty of Science,King Khalid University,Abha,Saudi Arabia;6.Research Center for Advanced Materials Science (RCAMS),King Khalid University,Abha,Saudi Arabia;7.Deapartment of Physics,Kakatiya Umiversiy,Warangal,India |
| |
| Abstract: | The cuprous oxide (Cu2O) thin films were electrodeposited with different reaction temperatures. The structural, morphological, optical, photoluminescence and photo response properties of the deposited films were analyzed. XRD analysis reveals cubic crystal structure for the deposited films with polycrystalline nature. The film deposited at room temperature possess high crystallite size of 37 nm. The surface morphology shows that by increasing the deposition temperature pyramid shaped morphology changes. Laser Raman study confirms the peaks 109, 148, 219, 415 and 635 cm?1 conforms the Cu2O phase formation. The band gap of the films are 2.02, 2.10 and 2.27 eV for the RT, 40 and 50 °C, respectively. The photoluminescence spectral analysis contains an emission peak at 618 nm confirm the formation of Cu2O. The photo response study confirms the ohmic nature of the films. The film electrodeposited at room temperature showed good I–V curve at the illumination of 300 W cm?2. |
| |
| Keywords: | |
| 本文献已被 SpringerLink 等数据库收录！ |
|
