Range parameters of boron implanted into silicon |
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| Affiliation: | (1) Frauenhofer-Institut für Festk?rpertechnologie, Paul-Gerhardt-Allee 42, D-8000 München 60, Fed. Rep. Germany;(2) Institut für Radiochemie der Technischen Universit?t, D-8046 Garching, Fed. Rep. Germany |
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| Abstract: | The range parameters of boron in silicon have been measured using the10B(n,α)7 Li-nuclear reaction. The results indicate that the distributions can be perfectly modeled using Pearson IV distributions with 4 moments. The range is very well described by theoretical calculations, whereas the higher moments show a strong deviation from theory. |
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| Keywords: | 34,61 80 85.30 |
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