Effect of gallium oxide dopants on electrophysical and sorption properties of zinc oxide |
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| Authors: | M. V. Vinokurova A. A. Vinokurov L. E. Derlyukova |
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| Affiliation: | (1) Institute of New Chemical Problems, Russian Academy of Sciences, 142432 Chernogolovka, Moscow Region, Russian Federation |
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| Abstract: | The effect of gallium oxide dopants (0.1–0.3 at.% Ga) on the electrophysical and sorption properties of ZnO was studied in the temperature range from 19 to 350 °C. The introduction of the dopant increasing the conductivity of ZnO is accompanied by a change in the amounts of SO2 and Cl2 sorbed and the reactivity of zinc oxide. Translated fromIzvestiya Akademii Nauk. Seriya Khimicheskaya, No. 2, pp. 266–270, February, 1999. |
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| Keywords: | stilfur dioxide chemisorption zinc oxide conductivity surface gallium dopants |
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