内电场对纳米硅光致发光谱的影响

从量子限制发光中心模型出发，计算了纳米硅的光致发光（PL）特征与发光中心间的关系. 研究发现，纳米硅与发光中心间的内电场对载流子复合率及峰位振荡有着十分重要的影响. 在2—5 nm的尺寸范围内，纳米硅发光中心上的载流子复合概率远大于内部复合概率，仅需考虑发光中心上的载流子复合发光. 还发现发光中心与纳米硅粒子间的内电场对于纳米硅的发光峰位振荡有着显著的影响.发光中心与纳米硅粒子间的内电场的存在会显著减小纳米硅粒子的内部发光效率以及外部相应发光中心上的发光强度，使得纳米硅PL谱的峰位随纳米晶粒尺寸变化而发生 关键词： 内电场 纳米硅 光致发光 量子限制发光中心

Effect of inner electric field on the photoluminescence spectrum of nanosilicon

Based on the quantum confinement_luminescence center model, t he relation between the inner electric field (IEF) and the photoluminescence(PL) character is calculated. Results show that the IEF between nanosilicon and lum inescence centers (LCs) can have a strong effect on the carrier recombination ra te and th e spectrum peak position swinging. In the range from 2 to 5 nm, the carrier reco mbination rate at the LCs is much bigger than the rates of recombination inside the nanosilicon. And dut to the presence of IEF between nanosilicon and LCs, the PL intensity at the LCs and inside nanosilicon will reduce remarkably.