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Raman characterization of passivated GaAs surfaces |
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| Authors: | G M O'Connor C J McDonagh F G Anderson T J Glynn and G P Morgan G J Hughes L Roberts and M O Henry |
| Institution: | Department of Physics, University College, Galway, Ireland School of Physical Sciences, Dublin City University, Collins Avenue, Dublin 9, Ireland |
| Abstract: | The technique of Raman scattering at room temperature, is used to investigate the effect of H2S passivation of the surface of n-type GaAs. Well-defined LO, L- and L+ features are distinguished in spectra which have been recorded in z(x, y)ovbar|zovbar] scatte ring orientation. It is observed that the ratio of the LO to L- peak is reduced by the effects of the passivation process and that the shift of the L+ feature from the laser line is decreased. This latter effect, it is suggested, is caused by a decrease in free-carrier concentration due to donor neutralization by hydrogen during passivation. This neutralization effect will also affect the LO to L- ratio and so complicate a quantitative analysis of the influence of passivation on the surface barrier potential. |
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