Evolution of InAs islands in the Stranski-Krastanow mode of InAs/GaAs(001) fabricated using molecular beam epitaxy |
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| Authors: | Wu Ju Jin Pen Lü Xiao-jing Jiao Yu-heng Wang Zhan-guo |
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| Affiliation: | (1) Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing, 100083, China |
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| Abstract: | Based on step-by-step observation using atomic force microscope, two distinctive successive phases were distinguished in accordance with evolution of the three-dimensional InAs islands during the Stranski-Krastanow mode of the InAs/GaAs(001) system fabricated using molecular-beam epitaxy. The initial phase is consistent with a power law, and the latter phase is a comparatively gradual one. |
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| Keywords: | In As/GaAs dots SK mode |
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