Growth of gallium arsenide in a GaAs-AsCl3-H2 gas-transport system. 2. Growth mechanism

Electron microscopy of platinum-shadowed carbon replicas has been used in examining the growth surfaces of autoepitaxial GaAs films produced at various initial supersaturations on substrates of (111)A, (111)B, (110), and (100) orientations. The changes in growth kinetics previously described are found to be accompanied by an alteration in the structure of the growing layer, together with the change in the nature of the centers responsible for producing the sinks (steps).Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp. 24–29, December, 1977.We are indebted to S. M. Dolgikh for performing various experiments on the production of the GaAs specimens.