Global simulation of coupled carbon and oxygen transport in a Czochralski furnace for silicon crystal growth |
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| Authors: | B. Gao K. Kakimoto |
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| Affiliation: | Research Institute for Applied Mechanics, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580, Japan |
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| Abstract: | For accurate prediction of carbon and oxygen impurities in a single crystal produced by the Czochralski method, global simulation of coupled oxygen and carbon transport in the whole furnace was implemented. Both gas-phase transportation and liquid-phase transportation of oxygen and carbon were considered. With five chemical reactions considered, SiO and CO concentrations in gas and C and O atom concentrations in silicon melt were solved simultaneously. The simulation results show good agreement with experimental data. |
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| Keywords: | A1. Computer simulation A1. Impurities A1. Mass transfer A1. Fluid flows A2. Czochralski method |
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