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In-situ observations of dissolution process of GaSb into InSb melt by X-ray penetration method |
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| Authors: | G. Rajesh M. Arivanandhan H. Morii T. Aoki T. Koyama Y. Momose A. Tanaka T. Ozawa Y. Inatomi Y. Hayakawa |
| Affiliation: | 1. Research Institute of Electronics, Shizuoka University, Johoku 3-5-1, Naka-ku, Hamamatsu, Shizuoka 432-8011, Japan;2. Department of Electrical Engineering, Shizuoka Institute of Science and Technology, Fukuroi, Shizuoka 437-8555, Japan;3. Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, 3-1-1 Yoshinodai, Sagamihara, Kanagawa 229-8510, Japan |
| Abstract: | Dissolution process of GaSb into InSb melt was observed by an X-ray penetration method. The intensity of X-rays penetrated through the rectangular shaped GaSb (seed)/InSb/GaSb (feed) sandwich sample was recorded by the CdTe line sensor detector. The penetrated X-ray intensities and images of the sample were obtained as a function of time and temperature. The gallium (Ga) composition profile of the sample was calculated as a function of time by making the calibration line with the penetrated X-ray intensities of GaSb and InSb standard samples. The calculated Ga composition profile of the grown sample agreed well with the data measured by energy dispersive X-ray spectroscopy analysis. The result suggested that lower GaSb seed dissolved faster than upper GaSb feed despite of the low temperature at the lower GaSb seed. It clearly indicates that the solutal transport induced by gravity strongly affects the dissolution process. |
| Keywords: | A1. Mass transfer A2. Growth from solutions B1. Gallium compounds B2. Semiconducting III&ndash V materials |
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