Low temperature Si homo-epitaxy by reduced pressure chemical vapor deposition using dichlorosilane,silane and trisilane |
| |
Authors: | B Vincent R Loo W VandervorstG Brammertz M Caymax |
| |
Institution: | Imec, Kapeldreef 75, 3001 Leuven, Belgium |
| |
Abstract: | Dichlorosilane (DCS), silane and trisilane have been investigated as Si precursors for low temperature (<700 °C) Si reduced pressure chemical vapor deposition. DCS and silane are limited to growth temperatures higher than 600–650 and 500 °C, respectively. At lower temperatures, absence of either Cl or H desorption from the surface impedes Si growth with acceptable growth rate (>5 Å/min). Trisilane permits the growth of Si at lower temperatures below 350 °C due to a specific growth mechanism enhancing H desorption. Layers grown at temperatures lower than 500 °C are defective, irrespective of the carrier gas, pressure and precursor flow used. |
| |
Keywords: | A1 Crystal structure A1 Desorption A3 Chemical vapor deposition processes B2 Semiconducting silicon B3 Field effect transistors |
本文献已被 ScienceDirect 等数据库收录! |
|