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Impurity induced periodic mesostructures in Sb-doped SnO2 nanowires |
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| Authors: | Annop Klamchuen Takeshi Yanagida Masaki Kanai Kazuki Nagashima Keisuke Oka Tomoji Kawai Masaru Suzuki Yoshiki Hidaka Shoichi Kai |
| Institution: | 1. Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan;2. PRESTO, Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan;3. Department of Applied Quantum Physics and Nuclear Engineering, Faculty of Engineering, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka 819-0395, Japan |
| Abstract: | Impurity doping on semiconductor nanowires formed via vapor–liquid–solid (VLS) mechanism has been investigated with the intention being to control the transport properties. Here we demonstrate that an addition of excess impurity dopants induces a mesostructure of long range periodic arched-shape in Sb-doped SnO2 nanowires. The microstructural and composition analysis demonstrated the importance of the presence of impurities at the growth interface during VLS growth rather than the dopant incorporation into nanowires, indicating kinetically induced mechanisms. |
| Keywords: | A1 Crystal morphology A1 Nanostructures A1 Low dimensional structures B1 Oxides |
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