Droplet epitaxy of zinc-blende GaN quantum dots |
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Authors: | T Schupp T Meisch B Neuschl M Feneberg K Thonke K Lischka DJ As |
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Institution: | 1. Universität Paderborn, Department Physik, Warburger Str. 100, 33095 Paderborn, Germany;2. Institut für Quantenmaterie, Gruppe Halbleiterphysik, Universität Ulm, 89069 Ulm, Germany |
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Abstract: | Zinc-blende GaN quantum dots were grown on 3C-AlN(0 0 1) by a vapor–liquid–solid process in a molecular beam epitaxy system. We were able to control the density of the quantum dots in a range of 5×108–5×1012 cm−2. Photoluminescence spectroscopy confirmed the optical activity of the GaN quantum dots in a range of 1011–5×1012 cm−2. The data obtained give an insight to the condensation mechanism of the vapor–liquid–solid process in general, because the GaN quantum dots condense in metastable zinc-blende crystal structure supplied by the substrate, and not in the wurtzite crystal structure expected from free condensation in the droplet. |
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Keywords: | A1 Atomic force microscopy A1 Growth models A1 Nanostructures A1 Reflection high energy electron diffraction A3 Molecular beam epitaxy B1 Nitrides |
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