Thermogravimetric analysis and microstructural observations on the formation of GaN from the reaction between Ga2O3 and NH3 |
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Authors: | Hajime Kiyono Toshiki SakaiMari Takahashi Shiro Shimada |
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Institution: | Graduate School of Engineering, Hokkaido University, Sapporo 060-8628, Japan |
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Abstract: | Thermogravimetric analysis (TGA) and microstructural observations were carried to investigate the nitridation mechanism of β-Ga2O3 powder to GaN under an NH3/Ar atmosphere. Non-isothermal TGA showed that nitridation of β-Ga2O3 starts at ∼650 °C, followed by decomposition of GaN at ∼1100 °C. Isothermal TGA showed that nitridation follows linear kinetics in the temperature range 800–1000 °C. At an early stage of nitridation, small GaN particles (∼5 nm) are deposited on the β-Ga2O3 crystal surface and they increase with time. We proposed a mechanism for the nitridation of Ga2O3 by NH3 whereby nitridation of β-Ga2O3 proceeds via the intermediate vapor species Ga2O(g). |
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Keywords: | A1 Growth models A2 Growth from vapor B1 Nitrides |
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