首页 | 本学科首页   官方微博 | 高级检索  
     


Band gap narrowing and doping level of heavily doped Germanium nanocrystals deduced from photoconductivity studies
Affiliation:1. Univ. Lille, CNRS, Centrale Lille, ISEN, Univ. Valenciennes, UMR 8520 – IEMN, F-59000 Lille, France;2. State Key Laboratory of Silicon Materials, and School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, China;1. Photonics department, Research Institute for Applied Physics & Astronomy(RIAPA), University of Tabriz, Tabriz, Iran;2. Aras International Campus - University of Tabriz, Tabriz, Iran;3. School of Electrical, Electronic and Computer Engineering, The University of Western Australia, Crawley, WA 6009, Australia;1. Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5–7, 10117 Berlin, Germany;2. PoliFab - Politecnico di Milano, via Giuseppe Colombo 81, 20133 Milano, Italy;1. Laboratory of Laboratory of Spectroscopic and Optical Characterization of Materials, Faculty of Sciences, University of Sfax, BP1171, 3018 Sfax, Tunisia;2. Institut des Molécules et Matériaux du Mans(IMMM), LUNAM Université, Université du Maine, CNRS UMR 6283, Avenue Olivier Messiaen, F-72085 Le Mans Cedex 09, France
Abstract:We investigate the photoconductivity of a n+-ZnO/n-Ge NCs/p+-GaAs junction where the active layer consists of heavily n-doped Ge NCs synthesized in the gas phase. Measurement of a significant current at energies smaller than the band gap of GaAs demonstrates the photogeneration of charge carriers by the Ge NCs. From the correlation of the NC size with the absorption threshold, a narrowing of the direct band gap in the Ge NC thin film is obtained and attributed to the heavy doping of the Ge NCs. A remarkably high electrical activation of ~15% is found for the incorporated P impurities in the NCs.
Keywords:Quantum dots  Heavy doping  Germanium  Photoconductivity
本文献已被 ScienceDirect 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号