Influence of GaAsSb structural properties on the optical properties of InAs/GaAsSb quantum dots |
| |
| Institution: | 1. School of Photovoltaic and Rene Energy Engineering, University of New South Wales, Sydney 2052, Australia;2. School of Physics, University of New South Wales, Sydney 2052, Australia;1. School of Computer Science, Jiangxi University of Traditional Chinese Medicine, Nanchang 330004, China;2. School of Science, East China Jiaotong University, Nanchang 330013, China;1. International Laboratory for Quantum Functional Materials of Henan, Zhengzhou University, Zhengzhou, 450001, Henan, China;2. College of Science, Henan University of Technology, Zhengzhou 450001, Henan, China;3. School of Physics and Engineering, Zhengzhou University, Zhengzhou 450001, Henan, China;4. College of Science, Zhongyuan University of Technology, Zhengzhou 450007, Henan, China;1. Benemérita Universidad Autónoma de Puebla, Facultad de Ingeniería Química, Ciudad Universitaria, San Manuel, Puebla, Código Postal 72570, Mexico;2. Universidad de Santiago de Chile, Facultad de Química y Biología, Laboratorio de Química Teórica, Santiago, Chile;3. Benemérita Universidad Autónoma de Puebla, Facultad de Ingeniería, Apdo. Postal J-39, Puebla, Pue. 72570, Mexico;4. Universidad Nacional Autónoma de México-Departamento de Física y Química Teórica, DEPg-Facultad de Química, México D.F., C.P. 04510, Mexico |
| |
| Abstract: | The optical properties of InAs quantum dots with GaAsSb buffer, capping and cladding layers of different alloy compositions are studied by photoluminescence techniques. Fully strained GaAsSb layers show that the inclusion of a buffer layer gives a blue-shift to quantum dot emission, while for quantum dots capped with GaAsSb a clear red-shift is seen. Power-dependent photoluminescence suggests a transition from type-I to type-II can be achieved by GaAsSb at Sb composition between 11–13%, while the transition for the GaAsSb cladding layer occurs at around 11%. At low Sb composition, good crystal quality and energy barrier are detected by temperature-dependent photoluminescence, while high-level dislocation and defects exist under high antimony content, as evidenced by X-Ray Diffraction and Transmission Electron Microscopy. |
| |
| Keywords: | Quantum dot Epitaxy Heterostructure Photoluminescence |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
