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Effects of random fields in an antiferromagnetic Ising bilayer film
Institution:1. International Laboratory for Quantum Functional Materials of Henan, Zhengzhou University, Zhengzhou, 450001, Henan, China;2. College of Science, Henan University of Technology, Zhengzhou 450001, Henan, China;3. School of Physics and Engineering, Zhengzhou University, Zhengzhou 450001, Henan, China;4. College of Science, Zhongyuan University of Technology, Zhengzhou 450007, Henan, China;1. School of Computer Science, Jiangxi University of Traditional Chinese Medicine, Nanchang 330004, China;2. School of Science, East China Jiaotong University, Nanchang 330013, China;1. Benemérita Universidad Autónoma de Puebla, Facultad de Ingeniería Química, Ciudad Universitaria, San Manuel, Puebla, Código Postal 72570, Mexico;2. Universidad de Santiago de Chile, Facultad de Química y Biología, Laboratorio de Química Teórica, Santiago, Chile;3. Benemérita Universidad Autónoma de Puebla, Facultad de Ingeniería, Apdo. Postal J-39, Puebla, Pue. 72570, Mexico;4. Universidad Nacional Autónoma de México-Departamento de Física y Química Teórica, DEPg-Facultad de Química, México D.F., C.P. 04510, Mexico
Abstract:The magnetic properties (phase diagrams and magnetizations) of an antiferromagnetic Ising bilayer film with random fields are investigated by the use of the effective field theory with correlations. It is examined how an uncompensated magnetization can be realized in the system, due to the effects of random fields in the two layers. They show the tricritical, compensation point and reentrant phenomena, depending on these parameters.
Keywords:Phase diagrams  Magnetizations Tricritical behavior  Compensation point  Reentrant phenomena  Ising bilayer film
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