Flexible rewritable organic memory devices using nitrogen-doped CNTs/PEDOT:PSS composites |
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| Institution: | 1. Instituto de Investigación en Comunicación Óptica, Universidad Autónoma de San Luis Potosí, Álvaro Obregón 64, San Luis Potosí 78000, Mexico;2. Advanced Materials Department, IPICYT, Camino a la Presa San José 2055, Col. Lomas 4a sección, San Luis Potosí 78216, Mexico;1. Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 790-784, Republic of Korea;2. Chemistry, Imperial College London, London, SW7 2AZ, United Kingdom;3. Department of Materials Engineering and Convergence Technology and ETI, Gyeongsang National University, Jinju, 660-701, Republic of Korea;4. Department of Polymer Science & Engineering and Department of IT Convergence, Korea National University of Transportation, 50 Daehak-Ro, Chungju, 27469, Republic of Korea;1. College of Communications and Electronics Engineering, Qiqihar University, Heilongjiang, 161006, China;2. Modern Education Technology Center, Qiqihar University, Heilongjiang, 161006, China;3. Department of Physics and Materials Sciences, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong, China;4. Mudanjiang Medical College, Heilongjiang, 157011, China;1. Department of Electronic Engineering, University of Rome “Tor Vergata”, 00133 Rome, Italy;2. Technische Universität München, Electrical Eng. and Information Tech., Arcisstr. 21, 80333 München, Germany;1. School of Electronic Engineering, Bangor University, Dean Street, Bangor, Gwynedd, LL57 1UT, UK;2. Department of Chemistry, University of Manchester, Oxford Road, Manchester, M13 9PL, UK |
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| Abstract: | Nonvolatile rewritable organic memory devices based on poly(3,4-ethylene dioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) and nitrogen doped multi-walled carbon nanotube (NCNT) nanocomposites were fabricated on glass and PET substrates.Organic memory devices with bistable resistive switching were obtained using very low NCTN concentration (∼0.002 wt%) in the polymeric matrix. The memory devices exhibited a good ON/OFF ratio of approximately three orders of magnitude, a good retention time of 104 s under operating voltages ≤ |4V| and a few hundredths of write-read-erase-read cycles. The bistable resistive switching is mainly attributed to the creation of oxygen vacancies. These defects are introduced into the thin native Al oxide (AlOx) layer on the bottom electrode during the first voltage sweep. The well-dispersed NCNTs immersed in PEDOT:PSS play a key role as conductive channels for the electronic transport, hindering the electron trapping at the AlOx-polymer interface and inducing a soft dielectric breakdown of the AlOx layer. These PEDOT:PSS + NCNTs memory devices are to easy to apply in flexible low-cost technology and provide the possibility of large-scale integration. |
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| Keywords: | N-MWCNTs Resistive organic memory devices Al oxide PEDOT:PSS Flexible substrates |
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