Low voltage bipolar resistive switching in self-assembled PVDF nanodot network in capacitor like structures on Au/Cr/Si with Hg as a top electrode |
| |
| Institution: | 1. Department of Chemistry, Fu Jen Catholic University, New Taipei City 24205, Taiwan;2. Department of Opto-Electronic Engineering, National Dong Hwa University, Hualien 97401, Taiwan;1. Department of Physics, Ajou University, Suwon 443-749, South Korea;2. Department of Energy Systems Research, Ajou University, Suwon 443-749, South Korea;1. Novitas, Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore;2. CINTRA UMI CNRS/NTU/THALES 3288 Research Techno Plaza, 50 Nanyang Drive, Border X Block, Level 6, Singapore 637553, Singapore;3. Institute of Materials Research and Engineering, A*STAR, 2 Fusionopolis Way, Innovis, #08-03, Singapore 13863, Singapore;1. Key Laboratory of Interface Science and Engineering in Advanced Materials (Taiyuan University of Technology), Ministry of Education, Taiyuan, 030024, China;2. Research Center of Advanced Materials Science and Technology, Taiyuan University of Technology, Taiyuan, 030024, China;3. Department of Physics, Institute of Advanced Materials, and Institute of Research and Continuing Education (Shenzhen), Hong Kong Baptist University, Kowloon Tong, NT, Hong Kong, China;4. School of Physical Science and Electronics, Shanxi Datong University, Datong, 037009, China;5. School of Chemistry and Chemical Engineering, Shanxi University, Taiyuan, 030006, China |
| |
| Abstract: | In this letter, resistive switching phenomena in self-assembled nanodot network of Polyvinylidene fluoride (PVDF) polymer in a capacitor geometry of Hg/PVDF/Au/Cr/Si is investigated. A stable & bipolar resistive switching with a set voltage ranging from 0.35 V to 0.9 V & reset voltage with a range of −0.08 V to −0.25 V is detected. A practical resistance ratio between HRS and LRS of 10–25 may have great potential in organic memories. Possible mechanism for the bipolar switching is discussed with the filament type conduction mechanism. Furthermore, the low voltage switching is elucidated with the high current density associated filament formation and it is explicated using the parallel resistor model. |
| |
| Keywords: | PVDF thin films Self-assembled nanodots Bipolar resistive switching |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
