Al/CdSe/GaSe/C resonant tunneling thin film transistors |
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| Institution: | 1. Department of Physics, Arab-American University, Jenin, West Bank, Palestinian Authority;2. Department of Basic Sciences and Humanities, College of Engineering, University of Dammam, Dammam, Saudi Arabia;3. Group of Physics, Faculty of Engineering, Atilim University, 06836 Ankara, Turkey;1. Department of Materials Science, Tohoku University, Sendai, Japan;2. Institute of Material Research, Tohoku University, Sendai, Japan;1. Department of Physics, Faculty of Science, Cairo University, Giza, Egypt;2. Basic Sciences Department, College of Engineering, University of Dammam, Saudi Arabia;1. Institute of Theoretical Physics and Astronomy, Vilnius University, Saulėtekio 3, Vilnius LT-10222, Lithuania;2. Research Institute for Applied Physics, University of Tabriz, Tabriz, Iran;1. Department of Electrical, Biomedical and Mechatronics Engineering, Qazvin Branch, Islamic Azad University, Qazvin, Iran;2. Department of Electrical Engineering, Sharif University of Technology, Azadi Ave., Tehran, Iran;1. Key Laboratory of Quantum Information, University of Science and Technology of China, CAS, Hefei, Anhui 230026, China;2. Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China;3. The State Key Laboratory for Superlattices and Microstructures, Institute of semiconductors, CAS, PO Box 912, Beijing 100083, China |
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| Abstract: | An Al/CdSe/GaSe/C thin film transistor device was prepared by the physical vapor deposition technique at a vacuum pressure of 10−5 mbar. The x-ray diffraction measurements demonstrated the polycrystalline nature of the surface of the device. The dc current-voltage characteristics recorded for the Al/CdSe/C and Al/CdSe/GaSe/C channels displayed a resonant tunneling diode features during the forward and reverse voltage biasing, respectively. In addition, the switching current ratio of the Al/CdSe/C increased from 18.6 to 9.62×103 as a result of the GaSe deposition on the CdSe surface. Moreover, the alternating electrical signal analyses in the frequency range of 1.0 MHz to 1.8 GHz, showed some remarkable properties of negative resistance and negative capacitance spectra of the Al/CdSe/GaSe/C thin film transistors. Two distinct resonance-antiresonance phenomena in the resistance spectra and one in the capacitance spectra were observed at 0.53, 1.04 and 1.40 GHz for the Al/CdSe/C channel, respectively. The respective resonating peak positions of the resistance spectra shift to 0.38 and 0.95 GHz when GaSe is interfaced with CdSe. These features of the thin film transistors are promising for use in high quality microwave filtering circuits and also for use as ultrafast switches. |
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| Keywords: | Coating Resonant tunneling diode Ultrafast switches |
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