Investigation of enhancement mode HfO2 insulated N-polarity GaN/InN/GaN/In0.9Al0.1N heterostructure MISHEMT for high-frequency applications |
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| Institution: | 1. S.K.P Engineering College, Tiruvannamalai, India;2. Dayananda Sagar University, Bangalore, India;3. Biju Patnaik University of Technology, Odisha, India;1. UNICAL, Università della Calabria, Rende 87036, Italy;2. Università di Padova, I-36100 Vicenza, Italy;3. Universidad San Francisco de Quito, Quito, Ecuador;4. Università di Padova, via Gradenigo 6B, 35131 Padova and IUNET, Italy;5. STMicroelectronics, Stradale Primosole 50, Catania, Italy;1. High Frequency & Optical Device Works, Mitsubishi Electric Corporation, Japan;2. Information Technology R&D Center, Mitsubishi Electric Corporation, Japan;1. Department of Materials Science & Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan, ROC;2. Institute of Photonic System, National Chiao-Tung University, Tainan 71150, Taiwan, ROC;3. International College of Semiconductor Technology, National Chiao-Tung University, HsinChu 30010, Taiwan, ROC;1. Electronics and Communication Engineering Department, Silicon Institute of Technology, Bhubaneswar, India;2. Electronics and Telecommunication Engineering Department, Jadavpur University, Kolkata, India;3. School of VLSI Technology, Indian Institute of Engineering Science and Technology, Shibpur, India |
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| Abstract: | In this paper, we examined normally-OFF N-polar InN-channel Metal insulated semiconductor high-electron mobility transistors (MISHEMTs) device with a relaxed In0.9Al0.1N buffer layer. In addition, the enhancement-mode operation of the N-polar structure was investigated. The effect of scaling in N-polar MISHEMT, such as the dielectric and the channel thickness, alter the electrical behavior of the device. We have achieved a maximum drain current of 1.17 A/mm, threshold voltage (VT) =0.728 V, transconductance (gm) of 2.9 S mm?1, high ION/IOFF current ratio of 3.23×103, lowest ON-state resistance (RON) of 0.41 Ω mm and an intrinsic delay time (τ) of 1.456 Fs along with high-frequency performance with ft/ fmax of 90 GHz/109 GHz and 180 GHz/260 GHz for TCH =0.5 nm at Vds =0.5 V and 1.0 V. The numerically simulated results of highly confined GaN/InN/GaN/In0.9Al0.1N heterostructure MISHEMT exhibits outstanding potential as one of the possibility to replace presently used N-polar MISHEMTs for delivering high power density and frequency at RF/power amplifier applications. |
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| Keywords: | Enhancement mode Hydrodynamic simulation InN channel N-polar MISHEMT |
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