Enhanced blue emission of ZnO films deposited on AlN substrates |
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| Affiliation: | 1. Department of Applied Physics, University of Information Science and Technology, Nanjing 210044, China;2. Department of Physics, Prairie View A&M University, Prairie View, TX 77446, USA;3. Institute of Applied Physics and Materials Engineering, FST, University of Macau, China;1. School of Materials Science and Engineering, Tsinghua University, Beijing 100084, PR China;2. Institute of Materials, China Academy of Engineering Physics, Mianyang 621907, PR China;3. School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450000, PR China;4. State Key Laboratory of Organic-Inorganic Composites, College of Materials Science and Engineering, Beijing University of Chemical Technology, Beijing 100029, PR China;1. School of Physics, University of the Witwatersrand, Johannesburg 2050, South Africa;2. Physics Department, Durban University of Technology, Durban 4000, South Africa;3. iThemba LABS, PO Box 725, Somerset West 7129, South Africa;4. PH Department, ISOLDE/CERN, 1211 Geneva 23, Switzerland;5. KU Leuven, Instituut voor Kern-en Stralingsfysica, 3001 Leuven, Belgium;6. Laboratorio MDM, IMM-CNR, Via Olivetti 2, 20864 Agrate Brianza (MB), Italy;7. Science Institute, University of Iceland, Dunhaga 3, 107 Reykjavík, Iceland;8. Materials Chemistry, RWTH Aachen University, Kopernikusstr. 10, 5274 Aachen, Germany;9. Department of Physics and Astronomy, Aarhus University, Ny Munkegade 120, 8000 Aarhus, Denmark;1. Department of Chemistry, Payame Noor University, Tehran, Iran;2. Pharmaceutical Sciences Research Center, Department of Medicinal Chemistry, Mazandaran University of Medical Sciences, Sari, Iran;3. Department of Engineering Science, College of Engineering, University of Tehran, P.O. Box 11365-4563, Tehran, Iran;1. Russian-Armenian University, 0051 Yerevan, Armenia;2. Yerevan State University, 0025 Yerevan, Armenia;3. Peter the Great Saint-Petersburg Polytechnic University, St. Petersburg 195251, Russia;4. Ioffe Institute, St Petersburg 194021, Russia;1. State Grid Henan Electric Power Company, Henan, China;2. Electrical Engineering, University of Utah, Salt Lake City, Utah, USA |
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| Abstract: | Taking into account the individual excellent optical properties of ZnO and AlN, the combination of ZnO with AlN may give the enhanced performances. Based on similar lattice constants between ZnO and AlN, considering that AlN is a promising high power integrated circuit substrate material, ZnO films are deposited on AlN substrates using magnetron sputtering. We find that AlN substrate shows an excellent transparency with an average transmittance of about 80%. As ZnO films are deposited on AlN substrate, average transmittance still maintain above 80% except for the UV absorption edge shifted to the longer wavelength. In addition, AlN substrate shows two emission peaks at 420 and 468 nm ascribed to Al vacancies with different charge states. As ZnO films are deposited on AlN substrates in pure Ar gas, the intensity of both peaks attain the maximum. After introducing O2 gas, they conversely decreases and attains the minimum. PL emissions increase again as the sample is annealed in vacuum. Excellent blue emissions are obtained due to the synergistic effect between ZnO and AlN. This work may help the development of the practical optoelectronic devices based on ZnO and AlN materials. |
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| Keywords: | ZnO Magnetron sputtering Blue emission PL mechanism |
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