| 深硅槽开挖工艺 |
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| 引用本文： | 李祥.深硅槽开挖工艺[J].微电子学,1993,23(2):39-43. |
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| 作者姓名： | 李祥 |
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| 作者单位： | 中国华晶电子集团公司 江苏无锡214035 |
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| 摘 要： | 本文介绍了硅槽应用,即硅槽隔离和硅槽电容,对器件性能的改善。并介绍了硅槽隔离和硅槽电容的形成步骤及硅槽刻蚀剖面的形貌控制,CBrF_3刻蚀硅槽侧壁保护层的形成等等。
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| 关 键 词： | 硅槽 刻蚀剖面 刻蚀工艺 集成电路 |
Etching Process for Deep Silicon Trench |
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| Li Xiang
China Huajing Electronic Group Corp.,Wuxi,Jiangsu.Etching Process for Deep Silicon Trench[J].Microelectronics,1993,23(2):39-43. |
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| Authors: | Li Xiang
China Huajing Electronic Group Corp Wuxi Jiangsu |
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| Institution: | Li Xiang
China Huajing Electronic Group Corp.,Wuxi,Jiangsu,214035 |
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| Abstract: | The improvements of device performances by silicon trench isolation and silicon trench capacitors are introduced in the paper. The formation process for silicon trench isolation and silicon trench capacitors, and the profile control of the silicon trench etching are described, as well as the formation of the protective layer on the side wall of the silicon trench by etching in CBrF3. |
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| Keywords: | Silicon trench Etching profile Etching process |
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