Recombination lasing in heliumlike silicon: a possible path to thewater window |
| |
Authors: | Apruzese J.P. Kepple P.C. Davis J. Pender J. |
| |
Affiliation: | US Naval Res. Lab., Washington, DC; |
| |
Abstract: | A major goal of current X-ray laser research is the achievement of gain in the 23.3-43.7 Å wavelength region, known as the `water window'. Silicon is the lowest atomic number element for which all the heliumlike 3-2 transitions lie in this region. The authors examine the fundamental kinetics of recombination lasing in this species, and conclude that the Si XIII 1s3d1D 2-1s2p1P1 line at 39.1 Å is an attractive candidate for recombination-pumped lasing. Attainment of gain in this line is somewhat more energetically favorable than for the hydrogenic Al XIII 3-2 transitions, but radiative trapping may be somewhat more troublesome than for H-like Al |
| |
Keywords: | |
|
|