The reactive adsorption of CCl4 on GaAs(100) surfaces at 300 K |
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| Institution: | 1. Department of Electronic Engineering, Xi’an University of Technology, Xi’an 710048, China;2. Department of Physics, Northwest University, Xi’an 710069, China;3. Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;1. College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, China;2. School of Education Administration, Guizhou University of Finance and Economics, Guiyang 550025, China;1. Institut Pascal, Université Clermont Auvergne, CNRS, SIGMA Clermont, F-63000 Clermont-Ferrand, France;2. St. Petersburg Academic University, Khlopina 8/3, 194021 St. Petersburg, Russia;3. Ioffe Physical Technical Institute of the Russian Academy of Sciences, Politekhnicheskaya 26, 194021 St. Petersburg, Russia;4. ITMO University, Kronverkskiy Prospekt 49,197101 St. Petersburg, Russia;1. Wuhan National High Magnetic Field Center and School of Physics, Huazhong University of Science & Technology, 1037 Luoyu Road, Wuhan, 430074, People''s Republic of China;2. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, People''s Republic of China;1. Department of Electronic Engineering, Xi''an University of Technology, Xi''an, 710048, China;2. National Engineering Research Center for Optoelectronics Devices, Institute of Semiconductors, CAS, Beijing, 100083, China |
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| Abstract: | Auger electron spectroscopy has been used to monitor the adsorption of CCl4 on an As-rich GaAs(100) surface at 300 K. Intensities of the Ga (55 eV), As (34 eV), C (270 eV) and Cl (181 eV) transitions have been used to estimate surface number densities at saturation and relative C : Cl stoichiometry of the surface species. Number densities of (4.3 ± 0.2) × 1014 and (2.0 ± 0.2) × 1014 cm ?2 are obtained for carbon and chlorine respectively, suggesting that coverage saturates near one theoretical monolayer and that the C : Cl stoichiometry is approximately 2:1. These data are discussed in terms of a reactive adsorption mechanism. |
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