Incorporation of nitrogen into amorphous-hydrogenated carbon (diamond-like) films |
| |
| Authors: | R Kalish O Amir R Brener R A Spits T E Derry |
| |
| Institution: | (1) Solid State Institute and Physics Department, Technion-Israel Institute of Technology, 32000 Haifa, Israel;(2) Schonland Research Centre, University of the Witwatersrand, P.O. Wits, 2050, South Africa |
| |
| Abstract: | Nitrogen-doped amorphous hydrogenated carbon films (a-C:H) were prepared by mixing nitrogen gas and benzene during dc plasma discharge deposition. The growth rate of the film decreases strongly with increasing nitrogen content in the mixture. The nitrogen concentration in the films was determined by nuclear reaction analysis (NRA) and Auger electron spectroscopy (AES) using suitable calibration samples. The results of AES measurements are generally consistent with NRA values. Nitrogen incorporation in the a-C:H films shows pronounced doping effects as reflected in their optical and electrical properties.Dedicated to Professor J. P. F. Sellschop for his 60th birthday |
| |
| Keywords: | 61 70 Wp 72 80 Ng 82 80Pv 24 30 He |
| 本文献已被 SpringerLink 等数据库收录！ |
