化学气相沉积法碳化硅外延设备技术进展

碳化硅(SiC)是制作高温、高频、大功率电子器件的理想电子材料,近20年来随着外延设备和工艺技术水平不断提升,外延膜生长速率和品质逐步提高,碳化硅在新能源汽车、光伏产业、高压输配线和智能电站等领域的应用需求越来越大。与硅半导体产业不同,碳化硅器件必须在外延膜上进行加工,因此碳化硅外延设备在整个产业链中占据承上启下的重要位置,而且也是整个产业链中最复杂、最难开发的设备。本文从碳化硅外延生长机理出发,结合反应室设计和材料科学的发展,介绍了化学气相沉积(CVD)法碳化硅外延设备反应室、加热系统和旋转系统等的技术进展,最后分析了CVD法碳化硅外延设备未来的研究重点和发展方向。

Advances in Chemical Vapor Deposition Equipment Used for SiC Epitaxy

Silicon carbide (SiC) is an ideal electronic material for high temperature, high frequency, and high power electronic devices. In last 20 years, with the continous development of epitaxial equipment and process, the film growth rate and quality of SiC have been significantly improved, which leads more and more applications in various industrial fields such as new energy vehicles, photovoltaic industry, high-voltage transmission industry and intelligent power stations. Different from the silicon semiconductor industry, silicon carbide devices must be processed on the epitaxial film. Therefore, silicon carbide epitaxial equipment plays an critical connecting role in the whole industrial chain, and it is also the most complex and difficult to develop equipment in the whole industrial chain. In this paper, the SiC pitaxial mechanism is briefly described. The progress of several important aspects of the SiC-chemical vapor deposition (CVD) equipment, such as reactor chamber, heating system and rotation system etc. are reviewed. The outlook for the future research key areas and direction of SiC is also given.